BC846A
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- Mfr.Part #
- BC846A
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SOT-23 NPN 0.2W 0.1A 80V Transis
- Stock
- 15,000
- In Stock ：
- 15,000
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Additional Feature :
- High Reliability
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Weight :
- 7.994566mg
- Published :
- 2011
- Width :
- 1.4mm
- Emitter Base Voltage (VEBO) :
- 6V
- hFE Min :
- 200
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Base Part Number :
- BC846
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 300MHz
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Lead Free :
- Lead Free
- Power Dissipation :
- 310mW
- Transistor Type :
- NPN
- Contact Plating :
- Tin
- Max Breakdown Voltage :
- 65V
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 15 Weeks
- Collector Base Voltage (VCBO) :
- 80V
- Current - Collector Cutoff (Max) :
- 15nA
- Frequency :
- 300MHz
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Max Power Dissipation :
- 300mW
- Height :
- 1.1mm
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -65°C~150°C TJ
- Max Junction Temperature (Tj) :
- 150°C
- Pbfree Code :
- yes
- Max Collector Current :
- 100mA
- Collector Emitter Saturation Voltage :
- 200mV
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 65V
- ECCN Code :
- EAR99
- Transition Frequency :
- 300MHz
- Collector Emitter Breakdown Voltage :
- 65V
- Transistor Application :
- SWITCHING
- Length :
- 3.05mm
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Datasheets
- BC846A
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846A-7-F Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC846A-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846A-7-F Applications
There are a lot of Diodes Incorporated
BC846A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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