BC847C

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

200 mV

Number of Pins :

3

REACH SVHC :

No SVHC

Current :

1 A

DC Current Gain-Min (hFE) :

420

hFE Min :

110

Termination :

SMD/SMT

Collector-Emitter Voltage-Max :

45 V

Max Operating Temperature :

150 °C

Transistor Element Material :

SILICON

Max Collector Current :

100 mA

Mount :

Reverse

Power Dissipation :

250 mW

Power Dissipation-Max (Abs) :

0.31 W

Transition Frequency :

100 MHz

Polarity/Channel Type :

NPN

Subcategory :

Other Transistors

Collector Emitter Breakdown Voltage :

45 V

Qualification Status :

Not Qualified

Emitter Base Voltage (VEBO) :

6 V

Max Junction Temperature (Tj) :

150 °C

Manufacturer :

Diotec Semiconductor AG

Pin Count :

3

Package Shape :

RECTANGULAR

Surface Mount :

yes

JESD-609 Code :

e3

Collector Current-Max (IC) :

0.1 A

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

250 mW

RoHS :

Compliant

Min Operating Temperature :

-65 °C

Number of Elements :

1

Ambient Temperature Range High :

150 °C

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn) - annealed

Voltage :

45 V

Terminal Form :

Gull wing

JEDEC-95 Code :

TO-236

Collector Emitter Voltage (VCEO) :

45 V

Number of Terminals :

3

Reach Compliance Code :

Compliant

Polarity :

NPN

HTS Code :

8541.21.00

Configuration :

Single

Terminal Position :

Dual

Collector Base Voltage (VCBO) :

50 V

Gain Bandwidth Product :

100 MHz

JESD-30 Code :

R-PDSO-G3

Height :

1.1 mm