BC847BW

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Min Operating Temperature :

-65 °C

Collector Emitter Breakdown Voltage :

45 V

Package Shape :

RECTANGULAR

Collector Current-Max (IC) :

0.1 A

Number of Terminals :

3

Qualification Status :

Not Qualified

Power Dissipation :

200 mW

Ambient Temperature Range High :

150 °C

Max Collector Current :

100 mA

Collector-Emitter Voltage-Max :

45 V

Max Power Dissipation :

200 mW

JESD-30 Code :

R-PDSO-G3

Transistor Element Material :

SILICON

Configuration :

Single

Max Operating Temperature :

150 °C

Transition Frequency :

100 MHz

DC Current Gain-Min (hFE) :

200

Polarity :

NPN

REACH SVHC :

No SVHC

Pin Count :

3

Reach Compliance Code :

Compliant

Emitter Base Voltage (VEBO) :

6 V

Polarity/Channel Type :

NPN

Collector Emitter Saturation Voltage :

200 mV

Collector Emitter Voltage (VCEO) :

45 V

Subcategory :

Other Transistors

Max Junction Temperature (Tj) :

150 °C

Peak Reflow Temperature (Cel) :

260

hFE Min :

110

Manufacturer :

Diotec Semiconductor AG

Number of Pins :

3

RoHS :

Compliant

Surface Mount :

yes

Height :

1.1 mm

Collector Base Voltage (VCBO) :

50 V

Terminal Form :

Gull wing

ECCN Code :

EAR99

Terminal Position :

Dual