BC847B
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- Mfr.Part #
- BC847B
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23
- Stock
- 18,927
- In Stock ：
- 18,927
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 50V
- Frequency :
- 300MHz
- Base Part Number :
- BC847
- Max Junction Temperature (Tj) :
- 150°C
- Transistor Application :
- SWITCHING
- hFE Min :
- 200
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Published :
- 2012
- Width :
- 1.4mm
- Length :
- 3.05mm
- Collector Emitter Breakdown Voltage :
- 45V
- Additional Feature :
- High Reliability
- Qualification Status :
- Not Qualified
- Max Breakdown Voltage :
- 45V
- Number of Elements :
- 1
- Height :
- 1.1mm
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 90mV
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 6V
- Contact Plating :
- Tin
- Weight :
- 7.994566mg
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 310mW
- Current - Collector Cutoff (Max) :
- 15nA
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 300MHz
- Current - Collector (Ic) (Max) :
- 100mA
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Transition Frequency :
- 300MHz
- Max Collector Current :
- 200mA
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 19 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Max Power Dissipation :
- 300mW
- JESD-609 Code :
- e3
- Operating Temperature :
- -65°C~150°C TJ
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 45V
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Terminal Position :
- Dual
- Datasheets
- BC847B
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847B-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 90mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 200mA volts can be achieved.
BC847B-7-F Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC847B-7-F Applications
There are a lot of Diodes Incorporated
BC847B-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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