APTC80TA15PG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

6

Case Connection :

Isolated

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Mounting Type :

Chassis Mount

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.15Ohm

Terminal Finish :

TIN SILVER COPPER

Rise Time :

13ns

Packaging :

Bulk

Package / Case :

SP6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Max Power Dissipation :

277W

Factory Lead Time :

36 Weeks

FET Feature :

Standard

Turn-Off Delay Time :

83 ns

Pin Count :

21

Continuous Drain Current (ID) :

28A

Operating Temperature :

-40°C~150°C TJ

Mount :

Chassis Mount, Screw

FET Type :

6 N-Channel (3-Phase Bridge)

Pulsed Drain Current-Max (IDM) :

110A

Power Dissipation :

277W

Rds On (Max) @ Id, Vgs :

150m Ω @ 14A, 10V

Turn On Delay Time :

10 ns

Vgs(th) (Max) @ Id :

3.9V @ 2mA

Number of Terminations :

21

Terminal Form :

UNSPECIFIED

JESD-30 Code :

R-XUFM-X21

Configuration :

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

30V

DS Breakdown Voltage-Min :

800V

RoHS Status :

RoHS Compliant

Number of Pins :

6

JESD-609 Code :

e1

Input Capacitance (Ciss) (Max) @ Vds :

4507pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Fall Time (Typ) :

35 ns

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

800V

Terminal Position :

UPPER

Additional Feature :

AVALANCHE RATED

Published :

2012