APTC60AM45B1G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Chassis Mount

Published :

2012

Fall Time (Typ) :

45 ns

Max Power Dissipation :

250W

Drain to Source Voltage (Vdss) :

600V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time :

21 ns

Rise Time :

30ns

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Operating Temperature :

-40°C~150°C TJ

FET Type :

3 N Channel (Phase Leg + Boost Chopper)

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

250W

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

7200pF @ 25V

Number of Pins :

1

Continuous Drain Current (ID) :

49A

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

45m Ω @ 24.5A, 10V

FET Feature :

Standard

Turn-Off Delay Time :

100 ns

Package / Case :

SP1

Number of Elements :

2

Mount :

Chassis Mount, Screw

Factory Lead Time :

36 Weeks

Series :

CoolMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3.9V @ 3mA

Packaging :

Bulk