APTC60AM35SCTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-30 Code :

R-XUFM-X10

Continuous Drain Current (ID) :

72A

Vgs(th) (Max) @ Id :

3.9V @ 2mA

Max Power Dissipation :

416W

Power Dissipation :

416W

Turn On Delay Time :

21 ns

Number of Elements :

2

Terminal Finish :

TIN SILVER COPPER

Drain-source On Resistance-Max :

0.035Ohm

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

600V

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

283 ns

Terminal Position :

UPPER

JESD-609 Code :

e1

Mounting Type :

Chassis Mount

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

UNSPECIFIED

Factory Lead Time :

36 Weeks

Gate Charge (Qg) (Max) @ Vgs :

518nC @ 10V

Operating Temperature :

-40°C~150°C TJ

DS Breakdown Voltage-Min :

600V

FET Type :

2 N-Channel (Half Bridge)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

10

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 25V

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Package / Case :

SP4

Case Connection :

Isolated

Mount :

Chassis Mount, Screw

Rise Time :

30ns

Number of Pins :

4

Fall Time (Typ) :

84 ns

Avalanche Energy Rating (Eas) :

1800 mJ

FET Feature :

Standard

Packaging :

Bulk

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

35m Ω @ 36A, 10V

ECCN Code :

EAR99

Pin Count :

10