APTC60AM35SCTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Number of Elements :

2

ECCN Code :

EAR99

Radiation Hardening :

No

Transistor Element Material :

SILICON

Mounting Type :

Chassis Mount

Avalanche Energy Rating (Eas) :

1800 mJ

Gate to Source Voltage (Vgs) :

30V

Drain to Source Voltage (Vdss) :

600V

Factory Lead Time :

36 Weeks

Package / Case :

SP4

Rise Time :

30ns

DS Breakdown Voltage-Min :

600V

Terminal Form :

UNSPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

10

Packaging :

Bulk

Case Connection :

Isolated

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Turn-Off Delay Time :

283 ns

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 25V

Turn On Delay Time :

21 ns

Drain-source On Resistance-Max :

0.035Ohm

Rds On (Max) @ Id, Vgs :

35m Ω @ 36A, 10V

JESD-30 Code :

R-XUFM-X10

Terminal Finish :

TIN SILVER COPPER

Power Dissipation :

416W

Terminal Position :

UPPER

Vgs(th) (Max) @ Id :

3.9V @ 2mA

Operating Temperature :

-40°C~150°C TJ

RoHS Status :

RoHS Compliant

Number of Pins :

4

Transistor Application :

SWITCHING

Fall Time (Typ) :

84 ns

Pin Count :

10

JESD-609 Code :

e1

FET Feature :

Standard

Gate Charge (Qg) (Max) @ Vgs :

518nC @ 10V

Max Power Dissipation :

416W

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Half Bridge)

Mount :

Chassis Mount, Screw

Continuous Drain Current (ID) :

72A