APTC60AM24T1G
- Mfr.Part #
- APTC60AM24T1G
- Manufacturer
- Microchip Technology
- Package / Case
- SP1
- Datasheet
- Download
- Description
- MOSFET 2N-CH 600V 95A SP1
- Stock
- 6,549
- In Stock :
- 6,549
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Mount :
- Chassis Mount, Screw
- Pin Count :
- 12
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Turn On Delay Time :
- 21 ns
- Rise Time :
- 30ns
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- THROUGH-HOLE
- Gate Charge (Qg) (Max) @ Vgs :
- 300nC @ 10V
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- -40°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 3.9V @ 5mA
- Mounting Type :
- Chassis Mount
- Packaging :
- Bulk
- Package / Case :
- SP1
- Fall Time (Typ) :
- 45 ns
- Max Power Dissipation :
- 462W
- Additional Feature :
- AVALANCHE RATED
- Input Capacitance (Ciss) (Max) @ Vds :
- 14400pF @ 25V
- Continuous Drain Current (ID) :
- 95A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e1
- Transistor Application :
- SWITCHING
- Terminal Position :
- UPPER
- Drain to Source Voltage (Vdss) :
- 600V
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 47.5A, 10V
- Number of Elements :
- 2
- Lead Free :
- Lead Free
- Factory Lead Time :
- 36 Weeks
- FET Type :
- 2 N-Channel (Half Bridge)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Feature :
- Standard
- Number of Pins :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 600V
- Turn-Off Delay Time :
- 100 ns
- Number of Terminations :
- 12
- Published :
- 2006
- Terminal Finish :
- TIN SILVER COPPER
- Datasheets
- APTC60AM24T1G
APTC60AM24T1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microsemi Corporation stock available at
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