APTC60DAM24CT1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Bulk

Turn On Delay Time :

21 ns

Terminal Position :

UPPER

Rise Time :

30ns

Pulsed Drain Current-Max (IDM) :

260A

Radiation Hardening :

No

Turn-Off Delay Time :

100 ns

Pin Count :

12

ECCN Code :

EAR99

FET Type :

N-Channel

Mounting Type :

Chassis Mount

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

UNSPECIFIED

Transistor Element Material :

SILICON

Number of Pins :

4

Package / Case :

SP4

DS Breakdown Voltage-Min :

600V

Case Connection :

Isolated

Power Dissipation-Max :

462W Tc

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

3.9V @ 5mA

Continuous Drain Current (ID) :

95A

Input Capacitance (Ciss) (Max) @ Vds :

14400pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

95A Tc

Fall Time (Typ) :

45 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Series :

CoolMOS™

Drain to Source Voltage (Vdss) :

600V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Mount :

Chassis Mount, Screw

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-40°C~150°C TJ

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

24m Ω @ 47.5A, 10V

Number of Terminations :

10