APTC60AM18SCG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

7

Package / Case :

SP6

JESD-609 Code :

e1

Terminal Position :

UPPER

Drain to Source Voltage (Vdss) :

600V

Gate Charge (Qg) (Max) @ Vgs :

1036nC @ 10V

Pbfree Code :

yes

Transistor Application :

SWITCHING

Factory Lead Time :

16 Weeks

Avalanche Energy Rating (Eas) :

1800 mJ

Drain-source On Resistance-Max :

0.018Ohm

Number of Pins :

6

Packaging :

Bulk

FET Type :

2 N-Channel (Half Bridge)

Mount :

Chassis Mount, Screw

Operating Temperature :

-40°C~150°C TJ

Terminal Finish :

TIN SILVER COPPER

Pin Count :

7

Max Power Dissipation :

833W

ECCN Code :

EAR99

Turn On Delay Time :

21 ns

Turn-Off Delay Time :

283 ns

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Published :

1997

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Chassis Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Radiation Hardening :

No

Continuous Drain Current (ID) :

143A

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

RoHS Status :

RoHS Compliant

Number of Elements :

2

FET Feature :

Standard

Case Connection :

Isolated

Terminal Form :

UNSPECIFIED

Series :

CoolMOS™

Input Capacitance (Ciss) (Max) @ Vds :

28000pF @ 25V

Rds On (Max) @ Id, Vgs :

18m Ω @ 71.5A, 10V

JESD-30 Code :

R-XUFM-X7

Vgs(th) (Max) @ Id :

3.9V @ 4mA

Lead Free :

Lead Free

Rise Time :

30ns

Power Dissipation :

833W

Fall Time (Typ) :

84 ns

Operating Mode :

ENHANCEMENT MODE