APTC60AM18SCG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

1036nC @ 10V

Series :

CoolMOS™

FET Type :

2 N-Channel (Half Bridge)

Avalanche Energy Rating (Eas) :

1800 mJ

Rds On (Max) @ Id, Vgs :

18m Ω @ 71.5A, 10V

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.018Ohm

Max Power Dissipation :

833W

RoHS Status :

RoHS Compliant

Number of Elements :

2

Transistor Application :

SWITCHING

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Factory Lead Time :

16 Weeks

Fall Time (Typ) :

84 ns

Terminal Finish :

TIN SILVER COPPER

Published :

1997

Pin Count :

7

Mount :

Chassis Mount, Screw

Continuous Drain Current (ID) :

143A

Additional Feature :

AVALANCHE RATED

Package / Case :

SP6

Rise Time :

30ns

Radiation Hardening :

No

JESD-30 Code :

R-XUFM-X7

Case Connection :

Isolated

Terminal Position :

UPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-40°C~150°C TJ

Vgs(th) (Max) @ Id :

3.9V @ 4mA

FET Feature :

Standard

Drain to Source Voltage (Vdss) :

600V

Turn-Off Delay Time :

283 ns

Lead Free :

Lead Free

Turn On Delay Time :

21 ns

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

28000pF @ 25V

Mounting Type :

Chassis Mount

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

7

Number of Pins :

6

Packaging :

Bulk

JESD-609 Code :

e1

Terminal Form :

UNSPECIFIED

Power Dissipation :

833W