APTC80AM75SCG
- Mfr.Part #
- APTC80AM75SCG
- Manufacturer
- Microchip Technology
- Package / Case
- SP6
- Datasheet
- Download
- Description
- MOSFET 2N-CH 800V 56A SP6
- Stock
- 2,811
- In Stock :
- 2,811
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Pbfree Code :
- yes
- Power Dissipation :
- 568W
- DS Breakdown Voltage-Min :
- 800V
- Number of Pins :
- 6
- Terminal Position :
- UPPER
- Factory Lead Time :
- 22 Weeks
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 2
- Case Connection :
- Isolated
- Packaging :
- Bulk
- Gate to Source Voltage (Vgs) :
- 30V
- Turn On Delay Time :
- 10 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Temperature :
- -40°C~150°C TJ
- Number of Terminations :
- 7
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 28A, 10V
- Max Power Dissipation :
- 568W
- Additional Feature :
- AVALANCHE RATED
- Pin Count :
- 7
- Mount :
- Chassis Mount, Screw
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Package / Case :
- SP6
- JESD-30 Code :
- R-XUFM-X7
- Vgs(th) (Max) @ Id :
- 3.9V @ 4mA
- Transistor Application :
- SWITCHING
- Mounting Type :
- Chassis Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 364nC @ 10V
- Drain-source On Resistance-Max :
- 0.075Ohm
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 35 ns
- Published :
- 1997
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- UNSPECIFIED
- Turn-Off Delay Time :
- 83 ns
- JESD-609 Code :
- e1
- Drain to Source Voltage (Vdss) :
- 800V
- FET Type :
- 2 N-Channel (Half Bridge)
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Terminal Finish :
- TIN SILVER COPPER
- Rise Time :
- 13ns
- Continuous Drain Current (ID) :
- 56A
- Transistor Element Material :
- SILICON
- FET Feature :
- Standard
- Input Capacitance (Ciss) (Max) @ Vds :
- 9015pF @ 25V
- Datasheets
- APTC80AM75SCG
APTC80AM75SCG datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microsemi Corporation stock available at
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