APTC80A10SCTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

10

FET Type :

2 N-Channel (Half Bridge)

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

22 Weeks

Number of Pins :

4

ECCN Code :

EAR99

Max Power Dissipation :

416W

Gate Charge (Qg) (Max) @ Vgs :

273nC @ 10V

Turn-Off Delay Time :

83 ns

Rise Time :

13ns

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

6761pF @ 25V

Terminal Position :

UPPER

Continuous Drain Current (ID) :

42A

Terminal Finish :

TIN SILVER COPPER

Pbfree Code :

yes

Pin Count :

10

Mounting Type :

Chassis Mount

Packaging :

Bulk

Published :

1997

Vgs(th) (Max) @ Id :

3.9V @ 3mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

AVALANCHE RATED

DS Breakdown Voltage-Min :

800V

Drain to Source Voltage (Vdss) :

800V

JESD-609 Code :

e1

Transistor Element Material :

SILICON

FET Feature :

Standard

JESD-30 Code :

R-XUFM-X10

Mount :

Chassis Mount, Screw

Number of Elements :

2

Turn On Delay Time :

10 ns

Package / Case :

SP4

Avalanche Energy Rating (Eas) :

670 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

35 ns

Terminal Form :

UNSPECIFIED

Case Connection :

Isolated

Power Dissipation :

416W

Gate to Source Voltage (Vgs) :

30V

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Pulsed Drain Current-Max (IDM) :

168A

Operating Temperature :

-40°C~150°C TJ

Drain-source On Resistance-Max :

0.1Ohm

Rds On (Max) @ Id, Vgs :

100m Ω @ 21A, 10V