APTC60HM70RT3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Series :

CoolMOS™

Rds On (Max) @ Id, Vgs :

70m Ω @ 39A, 10V

Vgs(th) (Max) @ Id :

3.9V @ 2.7mA

Rise Time :

30ns

Published :

1999

Drain to Source Voltage (Vdss) :

600V

Power Dissipation :

250W

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

84 ns

Turn-Off Delay Time :

283 ns

Turn On Delay Time :

21 ns

Gate Charge (Qg) (Max) @ Vgs :

259nC @ 10V

Continuous Drain Current (ID) :

39A

Max Power Dissipation :

250W

FET Type :

4 N-Channel (H-Bridge) + Bridge Rectifier

FET Feature :

Standard

Number of Pins :

3

Factory Lead Time :

36 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 25V

Number of Elements :

4

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-40°C~150°C TJ

ECCN Code :

EAR99

Package / Case :

SP3

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Bulk

Mount :

Screw