APTC60HM45SCTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Position :

UPPER

Max Power Dissipation :

250W

Fall Time (Typ) :

45 ns

Avalanche Energy Rating (Eas) :

1900 mJ

Case Connection :

Isolated

Series :

CoolMOS™

Rds On (Max) @ Id, Vgs :

45m Ω @ 22.5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Terminal Form :

UNSPECIFIED

FET Type :

4 N-Channel (H-Bridge)

Continuous Drain Current (ID) :

49A

ECCN Code :

EAR99

Number of Elements :

4

Packaging :

Bulk

Rise Time :

30ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1997

Input Capacitance (Ciss) (Max) @ Vds :

7200pF @ 25V

Operating Temperature :

-40°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

130A

Drain to Source Voltage (Vdss) :

600V

DS Breakdown Voltage-Min :

600V

RoHS Status :

RoHS Compliant

Pin Count :

14

Vgs(th) (Max) @ Id :

3.9V @ 3mA

FET Feature :

Super Junction

Mounting Type :

Chassis Mount

Mount :

Chassis Mount, Screw

Qualification Status :

Not Qualified

Turn On Delay Time :

21 ns

Operating Mode :

ENHANCEMENT MODE

Package / Case :

SP4

Power Dissipation :

250W

Number of Terminations :

14

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Turn-Off Delay Time :

100 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

36 Weeks

Lifecycle Status :

IN PRODUCTION (Last Updated: 2 weeks ago)

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Number of Pins :

4