APT80GA90LD40
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- Mfr.Part #
- APT80GA90LD40
- Manufacturer
- Microchip Technology
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- IGBT 900V 145A 625W TO-264
- Stock
- 16,230
- In Stock ：
- 16,230
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - IGBTs - Single
- JESD-609 Code :
- e1
- RoHS Status :
- RoHS Compliant
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Max Operating Temperature :
- 150°C
- Number of Terminations :
- 3
- Switching Energy :
- 1652μJ (on), 1389μJ (off)
- Min Operating Temperature :
- -55°C
- Additional Feature :
- LOW CONDUCTION LOSS
- Pin Count :
- 3
- Published :
- 1999
- JESD-30 Code :
- R-PSFM-T3
- Mounting Type :
- Through Hole
- Reverse Recovery Time :
- 25 ns
- Collector Emitter Breakdown Voltage :
- 900V
- Mount :
- Through Hole
- Test Condition :
- 600V, 47A, 4.7 Ω, 15V
- Input Type :
- Standard
- Pbfree Code :
- yes
- Turn Off Time-Nom (toff) :
- 320 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- POWER MOS 8™
- Factory Lead Time :
- 29 Weeks
- Turn On Time :
- 49 ns
- Max Collector Current :
- 145A
- Td (on/off) @ 25°C :
- 18ns/149ns
- Packaging :
- Tube
- Number of Elements :
- 1
- Gate Charge :
- 200nC
- IGBT Type :
- PT
- Package / Case :
- TO-264-3, TO-264AA
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vce(on) (Max) @ Vge, Ic :
- 3.1V @ 15V, 47A
- Transistor Application :
- POWER CONTROL
- Collector Emitter Voltage (VCEO) :
- 900V
- Polarity/Channel Type :
- N-Channel
- Max Power Dissipation :
- 625W
- Current - Collector Pulsed (Icm) :
- 239A
- Datasheets
- APT80GA90LD40
APT80GA90LD40 datasheet pdf and Transistors - IGBTs - Single product details from Microsemi Corporation stock available at
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