APT8024B2LLG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation :

565W

JESD-609 Code :

e1

Radiation Hardening :

No

Rise Time :

5ns

Fall Time (Typ) :

4 ns

Continuous Drain Current (ID) :

31A

Voltage - Rated DC :

800V

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

FET Type :

N-Channel

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Number of Elements :

1

Current Rating :

31A

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Input Capacitance (Ciss) (Max) @ Vds :

4670pF @ 25V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Mount :

Through Hole

Terminal Finish :

TIN SILVER COPPER

Drain-source On Resistance-Max :

0.24Ohm

Terminal Position :

Single

Turn-Off Delay Time :

23 ns

Rds On (Max) @ Id, Vgs :

240m Ω @ 15.5A, 10V

Number of Pins :

3

Series :

POWER MOS 7®

Package / Case :

TO-247-3 Variant

Turn On Delay Time :

9 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

2500 mJ

Case Connection :

DRAIN

Power Dissipation-Max :

565W Tc