APT8020JLL
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- Mfr.Part #
- APT8020JLL
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 33A ISOTOP
- Stock
- 12
- In Stock ：
- 12
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Chassis Mount
- Element Configuration :
- Single
- Number of Elements :
- 1
- Package / Case :
- SOT-227-4, miniBLOC
- Power Dissipation :
- 520W
- Gate Charge (Qg) (Max) @ Vgs :
- 195nC @ 10V
- Published :
- 1997
- Terminal Form :
- UNSPECIFIED
- Mount :
- Chassis Mount, Screw
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Breakdown Voltage :
- 800V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Number of Channels :
- 1
- Current Rating :
- 33A
- Length :
- 38.2mm
- Power Dissipation-Max :
- 520W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5200pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- POWER MOS 7®
- Height :
- 9.6mm
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Terminal Position :
- UPPER
- Pin Count :
- 4
- Turn On Delay Time :
- 12 ns
- Fall Time (Typ) :
- 10 ns
- Number of Terminations :
- 4
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Continuous Drain Current (ID) :
- 33A
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 39 ns
- FET Type :
- N-Channel
- Voltage - Rated DC :
- 800V
- Rise Time :
- 14ns
- Current - Continuous Drain (Id) @ 25°C :
- 33A Tc
- Number of Pins :
- 4
- Case Connection :
- Isolated
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 16.5A, 10V
- Drain-source On Resistance-Max :
- 0.2Ohm
- Weight :
- 30.000004g
- Width :
- 25.4mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e1
- Vgs (Max) :
- ±30V
- Factory Lead Time :
- 16 Weeks
- Datasheets
- APT8020JLL
N-Channel Tube 200m Ω @ 16.5A, 10V ±30V 5200pF @ 25V 195nC @ 10V SOT-227-4, miniBLOC
APT8020JLL Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5200pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 33A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 39 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
APT8020JLL Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 39 ns
APT8020JLL Applications
There are a lot of Microsemi Corporation
APT8020JLL applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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