APT8020JLL
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- Mfr.Part #
- APT8020JLL
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 33A ISOTOP
- Stock
- 12
- In Stock ：
- 12
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 800V
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Terminal Form :
- UNSPECIFIED
- Radiation Hardening :
- No
- Power Dissipation :
- 520W
- Weight :
- 30.000004g
- Number of Channels :
- 1
- RoHS Status :
- RoHS Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 33A Tc
- Mounting Type :
- Chassis Mount
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Position :
- UPPER
- Current Rating :
- 33A
- Rise Time :
- 14ns
- Vgs (Max) :
- ±30V
- Number of Terminations :
- 4
- Element Configuration :
- Single
- Number of Pins :
- 4
- Turn On Delay Time :
- 12 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- Isolated
- Drain-source On Resistance-Max :
- 0.2Ohm
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- POWER MOS 7®
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 33A
- Mount :
- Chassis Mount, Screw
- Height :
- 9.6mm
- Factory Lead Time :
- 16 Weeks
- Published :
- 1997
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 16.5A, 10V
- Fall Time (Typ) :
- 10 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 195nC @ 10V
- Power Dissipation-Max :
- 520W Tc
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Elements :
- 1
- Package / Case :
- SOT-227-4, miniBLOC
- Width :
- 25.4mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 5200pF @ 25V
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 39 ns
- Drain to Source Breakdown Voltage :
- 800V
- JESD-609 Code :
- e1
- Pin Count :
- 4
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 38.2mm
- Datasheets
- APT8020JLL
N-Channel Tube 200m Ω @ 16.5A, 10V ±30V 5200pF @ 25V 195nC @ 10V SOT-227-4, miniBLOC
APT8020JLL Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5200pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 33A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 39 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
APT8020JLL Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 39 ns
APT8020JLL Applications
There are a lot of Microsemi Corporation
APT8020JLL applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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