APT8020JLL
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- Mfr.Part #
- APT8020JLL
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 33A ISOTOP
- Stock
- 12
- In Stock ：
- 12
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- UNSPECIFIED
- Drain to Source Breakdown Voltage :
- 800V
- Mounting Type :
- Chassis Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 25.4mm
- Weight :
- 30.000004g
- Number of Elements :
- 1
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- FET Type :
- N-Channel
- Height :
- 9.6mm
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max :
- 520W Tc
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 5200pF @ 25V
- RoHS Status :
- RoHS Compliant
- JESD-609 Code :
- e1
- Factory Lead Time :
- 16 Weeks
- Lead Free :
- Lead Free
- Mount :
- Chassis Mount, Screw
- Turn On Delay Time :
- 12 ns
- Current - Continuous Drain (Id) @ 25°C :
- 33A Tc
- Package / Case :
- SOT-227-4, miniBLOC
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 16.5A, 10V
- Current Rating :
- 33A
- Terminal Position :
- UPPER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 39 ns
- Length :
- 38.2mm
- Packaging :
- Tube
- Number of Pins :
- 4
- Number of Terminations :
- 4
- Gate Charge (Qg) (Max) @ Vgs :
- 195nC @ 10V
- Power Dissipation :
- 520W
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 33A
- Radiation Hardening :
- No
- Series :
- POWER MOS 7®
- Voltage - Rated DC :
- 800V
- Element Configuration :
- Single
- Published :
- 1997
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 10 ns
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Case Connection :
- Isolated
- Rise Time :
- 14ns
- Pin Count :
- 4
- Number of Channels :
- 1
- Drain-source On Resistance-Max :
- 0.2Ohm
- Datasheets
- APT8020JLL
N-Channel Tube 200m Ω @ 16.5A, 10V ±30V 5200pF @ 25V 195nC @ 10V SOT-227-4, miniBLOC
APT8020JLL Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5200pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 33A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 39 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
APT8020JLL Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 39 ns
APT8020JLL Applications
There are a lot of Microsemi Corporation
APT8020JLL applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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