APT80GA90B
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- Mfr.Part #
- APT80GA90B
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 900V 145A 625W TO247
- Stock
- 30,747
- In Stock ：
- 30,747
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - IGBTs - Single
- Package / Case :
- TO-247-3
- Collector Emitter Voltage (VCEO) :
- 900V
- Radiation Hardening :
- No
- Current - Collector Pulsed (Icm) :
- 239A
- Gate-Emitter Thr Voltage-Max :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 625W
- Pin Count :
- 3
- Factory Lead Time :
- 32 Weeks
- Element Configuration :
- Single
- Packaging :
- Tube
- Transistor Application :
- POWER CONTROL
- Td (on/off) @ 25°C :
- 18ns/149ns
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Transistor Element Material :
- SILICON
- Additional Feature :
- LOW CONDUCTION LOSS
- Gate Charge :
- 200nC
- Input Type :
- Standard
- Collector Emitter Breakdown Voltage :
- 900V
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Case Connection :
- COLLECTOR
- Test Condition :
- 600V, 47A, 4.7 Ω, 15V
- Turn Off Time-Nom (toff) :
- 320 ns
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Time :
- 49 ns
- Published :
- 1999
- Polarity/Channel Type :
- N-Channel
- Vce(on) (Max) @ Vge, Ic :
- 3.1V @ 15V, 47A
- Max Collector Current :
- 145A
- IGBT Type :
- PT
- Gate-Emitter Voltage-Max :
- 30V
- RoHS Status :
- RoHS Compliant
- Mount :
- Through Hole
- Switching Energy :
- 1652μJ (on), 1389μJ (off)
- Max Power Dissipation :
- 625W
- Datasheets
- APT80GA90B
APT80GA90B datasheet pdf and Transistors - IGBTs - Single product details from Microsemi Corporation stock available at
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