2SD1980TL
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- Mfr.Part #
- 2SD1980TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 2A CPT3
- Stock
- 10,362
- In Stock ：
- 10,362
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- R-PSSO-G2
- Pin Count :
- 3
- Continuous Collector Current :
- 2A
- JESD-609 Code :
- e2
- Max Breakdown Voltage :
- 100V
- Power Dissipation :
- 1W
- Height :
- 2.3mm
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transition Frequency :
- 80MHz
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 2V
- Collector Base Voltage (VCBO) :
- 100V
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 1.5V
- Factory Lead Time :
- 20 Weeks
- Polarity :
- NPN
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- Transistor Type :
- NPN - Darlington
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Case Connection :
- COLLECTOR
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Base Part Number :
- 2SD1980
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Current Rating :
- 2A
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 100V
- HTS Code :
- 8541.29.00.75
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 80MHz
- Number of Elements :
- 1
- Termination :
- SMD/SMT
- Published :
- 1999
- Additional Feature :
- BUILT IN BIAS RESISTANCE RATIO IS 0.0857
- Length :
- 6.5mm
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 1000
- Pbfree Code :
- yes
- Width :
- 5.5mm
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Max Collector Current :
- 2A
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1mA, 1A
- Collector Emitter Voltage (VCEO) :
- 100V
- Power - Max :
- 10W
- Emitter Base Voltage (VEBO) :
- 6V
- Contact Plating :
- Copper, Tin
- Max Power Dissipation :
- 1W
- Datasheets
- 2SD1980TL
NPN - Darlington 150°C TJ 10μA ICBO 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD1980TL Overview
This device has a DC current gain of 1000 @ 1A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 1mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 80MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 2A volts is possible.
2SD1980TL Features
the DC current gain for this device is 1000 @ 1A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 80MHz
2SD1980TL Applications
There are a lot of ROHM Semiconductor
2SD1980TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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