2SD1898T100Q
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- Mfr.Part #
- 2SD1898T100Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A MPT3
- Stock
- 819
- In Stock ：
- 819
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 82
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 80V
- Terminal Finish :
- TIN COPPER
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Number of Pins :
- 3
- Contact Plating :
- Copper, Tin
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 20mA, 500mA
- Voltage - Rated DC :
- 80V
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Flat
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 3V
- HTS Code :
- 8541.21.00.95
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-243AA
- Max Power Dissipation :
- 2W
- Max Breakdown Voltage :
- 80V
- Gain Bandwidth Product :
- 100MHz
- Collector Base Voltage (VCBO) :
- 120V
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e2
- Radiation Hardening :
- No
- Max Collector Current :
- 1A
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 500mW
- Current Rating :
- 1A
- Continuous Collector Current :
- 1A
- Number of Elements :
- 1
- Transition Frequency :
- 100MHz
- Base Part Number :
- 2SD1898
- Published :
- 2009
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 80V
- Pbfree Code :
- yes
- Termination :
- SMD/SMT
- Case Connection :
- COLLECTOR
- Datasheets
- 2SD1898T100Q
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SD1898T100Q Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 500mA 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 20mA, 500mA.Continuous collector voltages of 1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 1A volts.
2SD1898T100Q Features
the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz
2SD1898T100Q Applications
There are a lot of ROHM Semiconductor
2SD1898T100Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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