2SD1863TV2Q
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- Mfr.Part #
- 2SD1863TV2Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A ATV
- Stock
- 45,134
- In Stock ：
- 45,134
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- hFE Min :
- 120
- Collector Emitter Saturation Voltage :
- 150mV
- Base Part Number :
- 2SD1863
- Number of Elements :
- 1
- Terminal Finish :
- TIN SILVER COPPER
- Collector Base Voltage (VCBO) :
- 120V
- Collector Emitter Voltage (VCEO) :
- 500mV
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 300mW
- Published :
- 2004
- Qualification Status :
- Not Qualified
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Current Rating :
- 1A
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- NPN
- Mount :
- Through Hole
- Packaging :
- Tape and Box (TB)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 150mA
- Power - Max :
- 1W
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 50V
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e1
- Polarity/Channel Type :
- NPN
- JESD-30 Code :
- R-PSIP-T3
- Transition Frequency :
- 100MHz
- Max Breakdown Voltage :
- 80V
- Package / Case :
- 3-SIP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 3V
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Voltage - Rated DC :
- 80V
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 20mA, 500mA
- Datasheets
- 2SD1863TV2Q
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SIP Tape & Box (TB) Through Hole
2SD1863TV2Q Overview
This device has a DC current gain of 120 @ 500mA 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 150mV.A VCE saturation (Max) of 400mV @ 20mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 150mA volts is possible.
2SD1863TV2Q Features
the DC current gain for this device is 120 @ 500mA 3V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz
2SD1863TV2Q Applications
There are a lot of ROHM Semiconductor
2SD1863TV2Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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