2SD1857TV2Q
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- Mfr.Part #
- 2SD1857TV2Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS NPN 120V 2A ATV
- Stock
- 3,808
- In Stock ：
- 3,808
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Current Rating :
- 1.5A
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 5V
- Packaging :
- Tape and Box (TB)
- Max Power Dissipation :
- 1W
- Voltage - Rated DC :
- 120V
- Base Part Number :
- 2SD1857
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 2A
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- HTS Code :
- 8541.29.00.75
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSIP-T3
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Package / Case :
- 3-SIP
- Gain Bandwidth Product :
- 80MHz
- Mounting Type :
- Through Hole
- Transition Frequency :
- 80MHz
- Collector Base Voltage (VCBO) :
- 120V
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Published :
- 2006
- hFE Min :
- 120
- JESD-609 Code :
- e1
- Collector Emitter Voltage (VCEO) :
- 2V
- Collector Emitter Breakdown Voltage :
- 120V
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 100mA, 1A
- Mount :
- Through Hole
- Terminal Finish :
- TIN SILVER COPPER
- Datasheets
- 2SD1857TV2Q
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SIP Tape & Box (TB) Through Hole
2SD1857TV2Q Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 80MHz.During maximum operation, collector current can be as low as 2A volts.
2SD1857TV2Q Features
the DC current gain for this device is 120 @ 100mA 5V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 80MHz
2SD1857TV2Q Applications
There are a lot of ROHM Semiconductor
2SD1857TV2Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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