2SD1816S-E
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- Mfr.Part #
- 2SD1816S-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 4A TP
- Stock
- 5,836
- In Stock ：
- 5,836
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Transition Frequency :
- 180MHz
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 130MHz
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Published :
- 2012
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Surface Mount :
- No
- Power Dissipation :
- 1W
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 120V
- Collector Emitter Voltage (VCEO) :
- 100V
- Emitter Base Voltage (VEBO) :
- 6V
- Polarity/Channel Type :
- NPN
- Packaging :
- Bulk
- Factory Lead Time :
- 2 Weeks
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e6
- Max Collector Current :
- 4A
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 200mA, 2A
- Base Part Number :
- 2SD1816
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Frequency :
- 180MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 500mA 5V
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- not_compliant
- Datasheets
- 2SD1816S-E
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SD1816S-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 70 @ 500mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 180MHz in the part.When collector current reaches its maximum, it can reach 4A volts.
2SD1816S-E Features
the DC current gain for this device is 70 @ 500mA 5V
the vce saturation(Max) is 400mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 180MHz
2SD1816S-E Applications
There are a lot of ON Semiconductor
2SD1816S-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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