2SD1815S-E
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- Mfr.Part #
- 2SD1815S-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A TP
- Stock
- 39,360
- In Stock ：
- 39,360
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2018
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Emitter Base Voltage (VEBO) :
- 6V
- Max Power Dissipation :
- 1W
- Configuration :
- Single
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 2 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 500mA 5V
- Max Collector Current :
- 3A
- JESD-609 Code :
- e6
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Current - Collector (Ic) (Max) :
- 3A
- Base Part Number :
- 2SD1815
- Number of Elements :
- 1
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Collector Emitter Voltage (VCEO) :
- 400mV
- Pin Count :
- 3
- Reach Compliance Code :
- not_compliant
- Frequency :
- 180MHz
- Contact Plating :
- Tin
- Surface Mount :
- No
- Collector Base Voltage (VCBO) :
- 120V
- Collector Emitter Breakdown Voltage :
- 100V
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 150mA, 1.5A
- Power Dissipation :
- 1W
- Datasheets
- 2SD1815S-E
NPN 150°C TJ 1μA ICBO 1 Elements NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SD1815S-E Overview
In this device, the DC current gain is 70 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 150mA, 1.5A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Maximum collector currents can be below 3A volts.
2SD1815S-E Features
the DC current gain for this device is 70 @ 500mA 5V
the vce saturation(Max) is 400mV @ 150mA, 1.5A
the emitter base voltage is kept at 6V
2SD1815S-E Applications
There are a lot of ON Semiconductor
2SD1815S-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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