2SD1802T-E

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Mfr.Part #
2SD1802T-E
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS NPN 50V 5A TP
Stock
847
In Stock :
847

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Factory Lead Time :
2 Weeks
Pbfree Code :
yes
hFE Min :
100
Max Power Dissipation :
1W
Base Part Number :
2SD1802
Configuration :
Single
Power - Max :
1W
Lead Free :
Lead Free
JESD-609 Code :
e6
Collector Emitter Voltage (VCEO) :
50V
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type :
Through Hole
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Frequency - Transition :
150MHz
Collector Emitter Breakdown Voltage :
50V
Packaging :
Bulk
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
ECCN Code :
EAR99
Collector Base Voltage (VCBO) :
60V
Polarity/Channel Type :
NPN
Surface Mount :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 100mA 2V
Operating Temperature :
150°C TJ
RoHS Status :
ROHS3 Compliant
Transistor Type :
NPN
Pin Count :
3
Vce Saturation (Max) @ Ib, Ic :
0.5mV @ 100mA, 2A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Emitter Base Voltage (VEBO) :
6V
Published :
2011
Max Collector Current :
5A
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Current - Collector Cutoff (Max) :
1μA ICBO
Datasheets
2SD1802T-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SD1802T-E from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:2SD1802, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:150°C TJ, 2SD1802T-E pinout, 2SD1802T-E datasheet PDF, 2SD1802T-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SD1802T-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SD1802T-E


NPN 150°C TJ 1μA ICBO NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole

2SD1802T-E Overview


In this device, the DC current gain is 200 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 0.5mV @ 100mA, 2A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Maximum collector currents can be below 5A volts.

2SD1802T-E Features


the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 0.5mV @ 100mA, 2A
the emitter base voltage is kept at 6V


2SD1802T-E Applications


There are a lot of ON Semiconductor
2SD1802T-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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