2SD1802T-E
- Mfr.Part #
- 2SD1802T-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 5A TP
- Stock
- 847
- In Stock :
- 847
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 2 Weeks
- Pbfree Code :
- yes
- hFE Min :
- 100
- Max Power Dissipation :
- 1W
- Base Part Number :
- 2SD1802
- Configuration :
- Single
- Power - Max :
- 1W
- Lead Free :
- Lead Free
- JESD-609 Code :
- e6
- Collector Emitter Voltage (VCEO) :
- 50V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 150MHz
- Collector Emitter Breakdown Voltage :
- 50V
- Packaging :
- Bulk
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 60V
- Polarity/Channel Type :
- NPN
- Surface Mount :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 0.5mV @ 100mA, 2A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Emitter Base Voltage (VEBO) :
- 6V
- Published :
- 2011
- Max Collector Current :
- 5A
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Datasheets
- 2SD1802T-E

NPN 150°C TJ 1μA ICBO NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SD1802T-E Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 0.5mV @ 100mA, 2A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Maximum collector currents can be below 5A volts.
2SD1802T-E Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 0.5mV @ 100mA, 2A
the emitter base voltage is kept at 6V
2SD1802T-E Applications
There are a lot of ON Semiconductor
2SD1802T-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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