2SD1802S-E
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- Mfr.Part #
- 2SD1802S-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A TP
- Stock
- 7,923
- In Stock ：
- 7,923
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 60V
- Published :
- 2012
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Collector Current :
- 5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 100mA 2V
- Collector Emitter Breakdown Voltage :
- 50V
- Lead Free :
- Lead Free
- Packaging :
- Bulk
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 1W
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- ECCN Code :
- EAR99
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Number of Pins :
- 3
- Base Part Number :
- 2SD1802
- hFE Min :
- 100
- Mounting Type :
- Through Hole
- Current - Collector (Ic) (Max) :
- 3A
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Emitter Base Voltage (VEBO) :
- 6V
- Surface Mount :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 2A
- Frequency - Transition :
- 150MHz
- Max Breakdown Voltage :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e6
- Factory Lead Time :
- 2 Weeks
- Pbfree Code :
- yes
- Datasheets
- 2SD1802S-E
NPN 150°C TJ 1μA ICBO NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SD1802S-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 140 @ 100mA 2V.When VCE saturation is 500mV @ 100mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 5A volts can be achieved.
2SD1802S-E Features
the DC current gain for this device is 140 @ 100mA 2V
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
2SD1802S-E Applications
There are a lot of ON Semiconductor
2SD1802S-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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