2SD1782KT146Q
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- Mfr.Part #
- 2SD1782KT146Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SMT3
- Stock
- 50,972
- In Stock ：
- 50,972
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Pin Count :
- 3
- Element Configuration :
- Single
- Contact Plating :
- Copper, Silver, Tin
- JESD-609 Code :
- e1
- Gain Bandwidth Product :
- 120MHz
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 80V
- Transition Frequency :
- 120MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Lead Free :
- Lead Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Published :
- 1998
- Operating Temperature :
- 150°C TJ
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Voltage - Rated DC :
- 80V
- hFE Min :
- 120
- Current Rating :
- 500mA
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Termination :
- SMD/SMT
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Factory Lead Time :
- 13 Weeks
- Max Collector Current :
- 500mA
- HTS Code :
- 8541.21.00.75
- Max Breakdown Voltage :
- 80V
- Max Power Dissipation :
- 200mW
- Polarity/Channel Type :
- NPN
- Base Part Number :
- 2SD1782
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Power Dissipation :
- 200mW
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Collector Emitter Breakdown Voltage :
- 80V
- Continuous Collector Current :
- 500mA
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Datasheets
- 2SD1782KT146Q
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD1782KT146Q Overview
This device has a DC current gain of 120 @ 100mA 3V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 120MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 500mA volts is possible.
2SD1782KT146Q Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 120MHz
2SD1782KT146Q Applications
There are a lot of ROHM Semiconductor
2SD1782KT146Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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