2SD1768STPQ
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- Mfr.Part #
- 2SD1768STPQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-72 Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SPT
- Stock
- 30,224
- In Stock ：
- 30,224
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 20mA, 500mA
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSIP-T3
- Max Collector Current :
- 1A
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Number of Terminations :
- 3
- JESD-609 Code :
- e1
- Packaging :
- Tape and Box (TB)
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Collector Emitter Voltage (VCEO) :
- 400mV
- HTS Code :
- 8541.21.00.95
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 3V
- Transition Frequency :
- 100MHz
- Terminal Finish :
- TIN SILVER COPPER
- Collector Emitter Breakdown Voltage :
- 80V
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- hFE Min :
- 120
- Number of Elements :
- 1
- Max Power Dissipation :
- 300mW
- Package / Case :
- SC-72 Formed Leads
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Mount :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Current - Collector (Ic) (Max) :
- 1A
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 100MHz
- Collector Base Voltage (VCBO) :
- 100V
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2009
- Datasheets
- 2SD1768STPQ
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN SC-72 Formed Leads Tape & Box (TB) Through Hole
2SD1768STPQ Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 500mA 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 20mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 1A volts.
2SD1768STPQ Features
the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
2SD1768STPQ Applications
There are a lot of ROHM Semiconductor
2SD1768STPQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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