2SD1683T
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- Mfr.Part #
- 2SD1683T
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 4A TO225-3
- Stock
- 19,160
- In Stock ：
- 19,160
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 190mV
- Package / Case :
- TO-225AA, TO-126-3
- Packaging :
- Bulk
- Gain Bandwidth Product :
- 150MHz
- Collector Emitter Breakdown Voltage :
- 50V
- Mounting Type :
- Through Hole
- Max Collector Current :
- 4A
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Max Power Dissipation :
- 1.5W
- Element Configuration :
- Single
- Frequency :
- 150MHz
- RoHS Status :
- RoHS Compliant
- Pin Count :
- 3
- Terminal Finish :
- Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 2V
- ECCN Code :
- EAR99
- hFE Min :
- 100
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Published :
- 2012
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 2A
- Transistor Type :
- NPN
- Transition Frequency :
- 150MHz
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Power Dissipation :
- 1.5W
- Datasheets
- 2SD1683T
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
2SD1683T Overview
In this device, the DC current gain is 100 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 190mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 2A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.150MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
2SD1683T Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 190mV
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
2SD1683T Applications
There are a lot of ON Semiconductor
2SD1683T applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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