2SA2007E

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Mfr.Part #
2SA2007E
Manufacturer
ROHM Semiconductor
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
TRANS PNP 60V 12A TO220FN
Stock
1,558
In Stock :
1,558

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Voltage (VCEO) :
500mV
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
500mV @ 400mA, 8A
Current - Collector (Ic) (Max) :
12A
Published :
1999
Collector Base Voltage (VCBO) :
-100V
Operating Temperature :
150°C TJ
Current - Collector Cutoff (Max) :
10μA ICBO
Number of Pins :
3
Transistor Type :
PNP
Element Configuration :
Single
Package / Case :
TO-220-3 Full Pack
Emitter Base Voltage (VEBO) :
-5V
DC Current Gain (hFE) (Min) @ Ic, Vce :
320 @ 2A 2V
Lead Free :
Lead Free
Collector Emitter Saturation Voltage :
-300mV
Max Collector Current :
12A
Max Power Dissipation :
25W
Continuous Collector Current :
-12A
Mounting Type :
Through Hole
Gain Bandwidth Product :
80MHz
Factory Lead Time :
7 Weeks
Packaging :
Bulk
hFE Min :
160
Collector Emitter Breakdown Voltage :
60V
RoHS Status :
ROHS3 Compliant
Datasheets
2SA2007E
Introducing Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SA2007E from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Pins:3, Package / Case:TO-220-3 Full Pack, Mounting Type:Through Hole, 2SA2007E pinout, 2SA2007E datasheet PDF, 2SA2007E amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SA2007E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor 2SA2007E


PNP 150°C TJ 10μA ICBO TO-220-3 Full Pack Bulk Through Hole

2SA2007E Overview


In this device, the DC current gain is 320 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 400mA, 8A.Maintaining the continuous collector voltage at -12A is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.Maximum collector currents can be below 12A volts.

2SA2007E Features


the DC current gain for this device is 320 @ 2A 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 400mA, 8A
the emitter base voltage is kept at -5V


2SA2007E Applications


There are a lot of ROHM Semiconductor
2SA2007E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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