2SA2018TL

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Mfr.Part #
2SA2018TL
Manufacturer
ROHM Semiconductor
Package / Case
SC-75, SOT-416
Datasheet
Download
Description
TRANS PNP 12V 0.5A EMT3
Stock
65
In Stock :
65

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Continuous Collector Current :
-500mA
Contact Plating :
Copper, Silver, Tin
Transistor Application :
SWITCHING
Length :
1.7mm
Number of Elements :
1
hFE Min :
270
Terminal Position :
Dual
Height :
700μm
Lead Free :
Lead Free
Gain Bandwidth Product :
260MHz
Number of Pins :
3
Base Part Number :
2SA2018
Collector Emitter Breakdown Voltage :
12V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Frequency :
260MHz
Time@Peak Reflow Temperature-Max (s) :
10
Collector Emitter Saturation Voltage :
-100mV
DC Current Gain (hFE) (Min) @ Ic, Vce :
270 @ 10mA 2V
Terminal Finish :
TIN SILVER COPPER
Max Collector Current :
500mA
Operating Temperature :
150°C TJ
Packaging :
Tape and Reel (TR)
Pin Count :
3
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 200mA
ECCN Code :
EAR99
Transistor Element Material :
SILICON
Transistor Type :
PNP
Polarity/Channel Type :
PNP
Emitter Base Voltage (VEBO) :
-6V
Current Rating :
-500mA
Terminal Form :
Gull wing
Voltage - Rated DC :
-12V
Published :
2004
Width :
900μm
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
13 Weeks
Package / Case :
SC-75, SOT-416
Element Configuration :
Single
Radiation Hardening :
No
Current - Collector Cutoff (Max) :
100nA ICBO
Pbfree Code :
yes
JESD-609 Code :
e1
Collector Base Voltage (VCBO) :
-15V
Transition Frequency :
260MHz
Mounting Type :
Surface Mount
Max Breakdown Voltage :
12V
Peak Reflow Temperature (Cel) :
260
Mount :
Surface Mount
Max Power Dissipation :
150mW
Number of Terminations :
3
Collector Emitter Voltage (VCEO) :
12V
Power Dissipation :
150mW
Introducing Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SA2018TL from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Base Part Number:2SA2018, Operating Temperature:150°C TJ, Package / Case:SC-75, SOT-416, Mounting Type:Surface Mount, Number of Terminations:3, 2SA2018TL pinout, 2SA2018TL datasheet PDF, 2SA2018TL amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SA2018TL ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor 2SA2018TL


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-75, SOT-416 Tape & Reel (TR) Surface Mount

2SA2018TL Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 270 @ 10mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -100mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 200mA.Single BJT transistor is recommended to keep the continuous collector voltage at -500mA in order to achieve high efficiency.The emitter base voltage can be kept at -6V for high efficiency.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 260MHz.The breakdown input voltage is 12V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

2SA2018TL Features


the DC current gain for this device is 270 @ 10mA 2V
a collector emitter saturation voltage of -100mV
the vce saturation(Max) is 250mV @ 10mA, 200mA
the emitter base voltage is kept at -6V
the current rating of this device is -500mA
a transition frequency of 260MHz


2SA2018TL Applications


There are a lot of ROHM Semiconductor
2SA2018TL applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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