2SA2018TL
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- Mfr.Part #
- 2SA2018TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS PNP 12V 0.5A EMT3
- Stock
- 65
- In Stock ：
- 65
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Pin Count :
- 3
- Element Configuration :
- Single
- hFE Min :
- 270
- Number of Terminations :
- 3
- Current Rating :
- -500mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- Base Part Number :
- 2SA2018
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 13 Weeks
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 500mA
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 200mA
- Collector Base Voltage (VCBO) :
- -15V
- Transition Frequency :
- 260MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 10mA 2V
- Gain Bandwidth Product :
- 260MHz
- Width :
- 900μm
- Max Power Dissipation :
- 150mW
- Height :
- 700μm
- Continuous Collector Current :
- -500mA
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 12V
- Voltage - Rated DC :
- -12V
- Transistor Type :
- PNP
- Length :
- 1.7mm
- Package / Case :
- SC-75, SOT-416
- Contact Plating :
- Copper, Silver, Tin
- Collector Emitter Breakdown Voltage :
- 12V
- Emitter Base Voltage (VEBO) :
- -6V
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Power Dissipation :
- 150mW
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Terminal Finish :
- TIN SILVER COPPER
- Collector Emitter Saturation Voltage :
- -100mV
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e1
- Frequency :
- 260MHz
- Max Breakdown Voltage :
- 12V
- Published :
- 2004
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2SA2018TL
2SA2018TL Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-75, SOT-416 Tape & Reel (TR) Surface Mount
2SA2018TL Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 270 @ 10mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -100mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 200mA.Single BJT transistor is recommended to keep the continuous collector voltage at -500mA in order to achieve high efficiency.The emitter base voltage can be kept at -6V for high efficiency.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 260MHz.The breakdown input voltage is 12V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
2SA2018TL Features
the DC current gain for this device is 270 @ 10mA 2V
a collector emitter saturation voltage of -100mV
the vce saturation(Max) is 250mV @ 10mA, 200mA
the emitter base voltage is kept at -6V
the current rating of this device is -500mA
a transition frequency of 260MHz
2SA2018TL Applications
There are a lot of ROHM Semiconductor
2SA2018TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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