2SA2016-TD-E

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Mfr.Part #
2SA2016-TD-E
Manufacturer
onsemi
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 50V 7A PCP
Stock
17,959
In Stock :
17,959

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
JESD-609 Code :
e6
Published :
2012
Package / Case :
TO-243AA
Reach Compliance Code :
not_compliant
Transistor Application :
SWITCHING
Lead Free :
Lead Free
Terminal Form :
Flat
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Collector Emitter Voltage (VCEO) :
50V
Number of Pins :
3
Packaging :
Tape and Reel (TR)
Peak Reflow Temperature (Cel) :
260
Pbfree Code :
yes
Current - Collector Cutoff (Max) :
100nA ICBO
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Transistor Element Material :
SILICON
Power - Max :
3.5W
Max Power Dissipation :
3.5W
Collector Emitter Saturation Voltage :
240mV
Gain Bandwidth Product :
330MHz
Power Dissipation :
1.3W
Transition Frequency :
290MHz
Transistor Type :
PNP
Emitter Base Voltage (VEBO) :
6V
RoHS Status :
ROHS3 Compliant
Max Collector Current :
7A
Factory Lead Time :
9 Weeks
Operating Temperature :
150°C TJ
hFE Min :
200
Terminal Position :
Single
Vce Saturation (Max) @ Ib, Ic :
400mV @ 40mA, 2A
ECCN Code :
EAR99
Number of Elements :
1
Collector Base Voltage (VCBO) :
50V
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 500mA 2V
Max Breakdown Voltage :
50V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
yes
Collector Emitter Breakdown Voltage :
50V
Pin Count :
3
Mounting Type :
Surface Mount
Case Connection :
COLLECTOR
Number of Terminations :
3
Polarity/Channel Type :
PNP
Configuration :
Single
Datasheets
2SA2016-TD-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SA2016-TD-E from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-243AA, Number of Pins:3, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Number of Terminations:3, 2SA2016-TD-E pinout, 2SA2016-TD-E datasheet PDF, 2SA2016-TD-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SA2016-TD-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SA2016-TD-E


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount

2SA2016-TD-E Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 500mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 240mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 40mA, 2A.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 290MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 7A volts at Single BJT transistors maximum.

2SA2016-TD-E Features


the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 240mV
the vce saturation(Max) is 400mV @ 40mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 290MHz


2SA2016-TD-E Applications


There are a lot of ON Semiconductor
2SA2016-TD-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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