2SA2013-TD-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Frequency - Transition :

400MHz

Vce Saturation (Max) @ Ib, Ic :

340mV @ 100mA, 2A

Pin Count :

3

Collector Emitter Saturation Voltage :

-200mV

Package / Case :

TO-243AA

Max Collector Current :

4A

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

50V

Collector Emitter Breakdown Voltage :

50V

Max Breakdown Voltage :

50V

Max Power Dissipation :

1.3W

Length :

4.5mm

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Transistor Type :

PNP

Mount :

Surface Mount

Terminal Position :

Dual

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Transition Frequency :

360MHz

Gain Bandwidth Product :

360MHz

hFE Min :

200

Published :

2012

Number of Pins :

3

Polarity/Channel Type :

PNP

Height :

1.5mm

Radiation Hardening :

No

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

1μA ICBO

Width :

2.5mm

JESD-609 Code :

e6

Packaging :

Tape and Reel (TR)

Power - Max :

3.5W

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 2V

Contact Plating :

Tin

Mounting Type :

Surface Mount

Number of Elements :

1

Terminal Form :

Flat

RoHS Status :

ROHS3 Compliant

Max Frequency :

360MHz

ECCN Code :

EAR99

Element Configuration :

Single

Factory Lead Time :

7 Weeks

Emitter Base Voltage (VEBO) :

-6V

Collector Base Voltage (VCBO) :

-50V

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ