2SA2012-TD-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

5V

Lead Free :

Lead Free

JESD-609 Code :

e6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Length :

4.5mm

Terminal Form :

Flat

Published :

2010

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

PNP

Collector Emitter Saturation Voltage :

-260mV

Surface Mount :

yes

Mounting Type :

Surface Mount

Transition Frequency :

350MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 2V

Package / Case :

TO-243AA

Operating Temperature :

150°C TJ

Number of Elements :

1

Configuration :

Single

Transistor Application :

SWITCHING

Case Connection :

COLLECTOR

Height :

1.5mm

Collector Base Voltage (VCBO) :

30V

Polarity/Channel Type :

PNP

Max Frequency :

1MHz

Frequency - Transition :

420MHz

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Max Power Dissipation :

3.5W

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

210mV @ 30mA, 1.5A

Width :

2.5mm

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

30V

Terminal Position :

Single

Number of Pins :

3

Pbfree Code :

yes

Pin Count :

3

Factory Lead Time :

9 Weeks

Max Collector Current :

5A

Collector Emitter Breakdown Voltage :

30V