2N7002DW
- Mfr.Part #
- 2N7002DW
- Manufacturer
- YANGJIE
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- SOT-363 N 60V 0.34A Transistors
- Stock
- 37,387
- In Stock :
- 37,387
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Turn On Delay Time :
- 5.85 ns
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 6
- Turn-Off Delay Time :
- 12.5 ns
- Weight :
- 28mg
- Continuous Drain Current (ID) :
- 115mA
- Rds On Max :
- 7.5 Ω
- Min Operating Temperature :
- -55°C
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Number of Elements :
- 2
- Max Operating Temperature :
- 150°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Nominal Vgs :
- 1.76 V
- Supplier Device Package :
- SC-88 (SC-70-6)
- Drain to Source Breakdown Voltage :
- 78V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Width :
- 1.25mm
- Published :
- 2008
- Power - Max :
- 200mW
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance :
- 50pF
- RoHS Status :
- ROHS3 Compliant
- Length :
- 2mm
- Number of Channels :
- 2
- Drain to Source Resistance :
- 2Ohm
- Element Configuration :
- Dual
- Rds On (Max) @ Id, Vgs :
- 7.5Ohm @ 50mA, 5V
- Resistance :
- 7.5Ohm
- Max Junction Temperature (Tj) :
- 150°C
- Height :
- 1.1mm
- Factory Lead Time :
- 8 Weeks
- Drain to Source Voltage (Vdss) :
- 60V
- FET Type :
- 2 N-Channel (Dual)
- Current - Continuous Drain (Id) @ 25°C :
- 115mA
- Power Dissipation :
- 200mW
- Threshold Voltage :
- 1.76V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Max Power Dissipation :
- 200mW
- FET Feature :
- Logic Level Gate
- Datasheets
- 2N7002DW
2N7002DW datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
:
The 2N7002 is a Logic Level N-channel MOSFET with a vertical DMOS structure and a well-proven silicon-gate manufacturing method that operates at low voltage and low current. This combination results in a device that combines the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free of thermal runaway and thermally induced secondary breakdown, as is typical of all MOS architectures. Vertical DMOS FETs from Microchip are perfect for a variety of switching and amplifying applications that require a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds. It is useful in power management applications due to its low on-state resistance and low input capacitance. The MOSFET can be easily controlled by 3.3V or 5V system voltage since it has low threshold voltage.
2N7002DW Features
:
? Dual N-Channel MOSFET
? Low On-Resistance
? Low Gate Threshold Voltage
? Low Input Capacitance
? Fast Switching Speed
? Low Input/Output Leakage
? Ultra-Small Surface Mount Package
? Lead Free/RoHS Compliant
2N7002DW Applications
:
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
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