2N7000
- Mfr.Part #
- 2N7000
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 350MA TO92-3
- Stock
- 40,937
- In Stock :
- 40,937
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs (Max) :
- ±20V
- Published :
- 2011
- Factory Lead Time :
- 11 Weeks
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Base Part Number :
- 2N7000
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Bulk
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Ta
- Number of Channels :
- 1
- Current Rating :
- 200mA
- Rds On (Max) @ Id, Vgs :
- 5Ohm @ 500mA, 10V
- Power Dissipation :
- 400mW
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Weight :
- 201mg
- Turn-Off Delay Time :
- 10 ns
- Min Operating Temperature :
- -55°C
- Continuous Drain Current (ID) :
- 200mA
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 60V
- Nominal Vgs :
- 2.1 V
- Supplier Device Package :
- TO-92-3
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 60V
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 60V
- Radiation Hardening :
- No
- Max Operating Temperature :
- 150°C
- Length :
- 4.8mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Power Dissipation-Max :
- 400mW Ta
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Contact Plating :
- Copper, Silver, Tin
- Rds On Max :
- 5 Ω
- Gate to Source Voltage (Vgs) :
- 20V
- Threshold Voltage :
- 2.1V
- Width :
- 4.19mm
- Drain to Source Resistance :
- 1.2Ohm
- Mount :
- Through Hole
- Height :
- 5.2mm
- Resistance :
- 5Ohm
- Input Capacitance :
- 40pF
- FET Type :
- N-Channel
- Datasheets
- 2N7000
2N7000 Documents
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N-Channel Bulk 5Ohm @ 500mA, 10V ±20V 50pF @ 25V 60V TO-226-3, TO-92-3 (TO-226AA)
2N7000 is a well-known N-channel MOSFET in a TO-92 package. Unlike BJT transistors, which are current-controlled devices, MOSFETs are devices that are controlled by applying a voltage to their gate. One of the key features of MOSFET technology is that the transistor requires very little or no input current to control the load, making MOSFETs ideal for use as amplifiers. The 2N7000 also has all these features, so it can be used in many general-purpose switching applications. It offers good performance when used as an amplifier, so you can use it for audio and other signal amplification purposes.
2N7000 Features
High cell density
High saturation current
Drain-to-source voltage of 60 V
Operating temperature of -55 °C to 150 °C
Rugged, reliable, and fast switching performance
2N7000 Applications
IC output
Audio preamplifier
Audio amplification
Microcontroller output
Various signal amplification
Switch or control loads under 200mA
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