2N7000-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

Mount :

Through Hole

Number of Elements :

1

Terminal Form :

THROUGH-HOLE

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Published :

2008

Reach Compliance Code :

Compliant

Product Type :

MOSFET

Mounting Style :

Through Hole

Vgs (Max) :

±30V

JEDEC-95 Code :

TO-92

Package Type :

TO-92

Element Configuration :

Single

Operating Temp Range :

-55C to 150C

Maximum Operating Temperature :

+150 °C

Package :

Bag

FET Feature :

--

Rad Hardened :

No

RoHS :

Details

Drain-source On Resistance-Max :

5Ohm

Manufacturer :

Microchip

Width :

4.19mm

Qualification Status :

Not Qualified

Brand :

Microchip Technology / Atmel

RoHS Status :

ROHS3 Compliant

Qualification :

-

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

Not Applicable

Pin Count :

3

ECCN Code :

EAR99

Type :

Power MOSFET

Supplier Device Package :

TO-92-3

Transistor Polarity :

N-Channel

JESD-30 Code :

O-PBCY-T3

Operating Temperature Classification :

Military

Current - Continuous Drain (Id) @ 25°C :

200mA Tj

Base Product Number :

2N7000

Continuous Drain Current (ID) :

200mA

Polarity :

N

Feedback Cap-Max (Crss) :

5 pF

Drain Current-Max (Abs) (ID) :

0.2A

Surface Mount :

No

Vgs(th) (Max) @ Id :

3V @ 1mA

Height :

5.334mm

Transistor Application :

SWITCHING

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Additional Feature :

HIGH INPUT IMPEDANCE

Number of Terminals :

3

Drain to Source Breakdown Voltage :

60V

Factory Lead Time :

6 Weeks

Length :

5.21mm

Channel Mode :

Enhancement

Lead Free :

Lead Free

DS Breakdown Voltage-Min :

60 V

Weight :

453.59237mg

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

60V

Continuous Drain Current Id :

200

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 25V

Current Rating :

200mA

Turn-Off Delay Time :

10 ns

REACH SVHC :

No SVHC

Packaging :

Bulk

Turn On Delay Time :

10 ns

Power Dissipation-Max :

1W Tc

Transistor Element Material :

SILICON

Power Dissipation :

1W

Minimum Operating Temperature :

-55 °C

Mounting Type :

Through Hole

Number of Elements per Chip :

1

Series :

--

Terminal Finish :

Matte Tin (Sn)

Polarity/Channel Type :

N-Channel

Channel Type :

N

MSL :

-

Voltage - Rated DC :

60V

Contact Plating :

Tin

Number of Pins :

3

FET Type :

N-Channel

Drain-Source On-Volt :

60(V)

Product Category :

MOSFET

Gate-Source Voltage (Max) :

±30(V)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation (Max) :

1W (Tc)

Continuous Drain Current :

0.2(A)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

JESD-609 Code :

e3

Configuration :

Single

Power Dissipation-Max (Abs) :

1 W

Package Shape :

Round

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

BOTTOM

Mounting :

Through Hole

Transistor Type :

1 N-Channel

Number of Channels :

1

Threshold Voltage :

800mV