2N7000

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

11 Weeks

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

60V

Height :

5.2mm

Radiation Hardening :

No

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

5Ohm

Mounting Type :

Through Hole

Min Operating Temperature :

-55°C

Current Rating :

200mA

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Drain to Source Breakdown Voltage :

60V

Number of Channels :

1

Base Part Number :

2N7000

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

400mW Ta

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Copper, Silver, Tin

Rds On Max :

5 Ω

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Element Configuration :

Single

Vgs (Max) :

±20V

Threshold Voltage :

2.1V

Weight :

201mg

Voltage - Rated DC :

60V

Input Capacitance :

40pF

Rds On (Max) @ Id, Vgs :

5Ohm @ 500mA, 10V

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Mount :

Through Hole

Number of Pins :

3

Continuous Drain Current (ID) :

200mA

Length :

4.8mm

Vgs(th) (Max) @ Id :

3V @ 1mA

Nominal Vgs :

2.1 V

Published :

2011

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

4.19mm

Supplier Device Package :

TO-92-3

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Packaging :

Bulk

Turn-Off Delay Time :

10 ns

Drain to Source Resistance :

1.2Ohm

Power Dissipation :

400mW