2N7000

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

60V

Power Dissipation-Max :

400mW Ta

Mounting Type :

Through Hole

FET Type :

N-Channel

Current Rating :

200mA

Weight :

201mg

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

TO-92-3

Drain to Source Breakdown Voltage :

60V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Nominal Vgs :

2.1 V

Radiation Hardening :

No

Lead Free :

Lead Free

Mount :

Through Hole

Threshold Voltage :

2.1V

Rds On Max :

5 Ω

Length :

4.8mm

Width :

4.19mm

Contact Plating :

Copper, Silver, Tin

Number of Elements :

1

Factory Lead Time :

11 Weeks

Power Dissipation :

400mW

Vgs(th) (Max) @ Id :

3V @ 1mA

Operating Temperature :

-55°C~150°C TJ

Packaging :

Bulk

Gate to Source Voltage (Vgs) :

20V

Resistance :

5Ohm

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Base Part Number :

2N7000

Input Capacitance :

40pF

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Continuous Drain Current (ID) :

200mA

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2011

Min Operating Temperature :

-55°C

Height :

5.2mm

Number of Pins :

3

Voltage - Rated DC :

60V

Element Configuration :

Single

Turn-Off Delay Time :

10 ns

Drain to Source Resistance :

1.2Ohm

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Rds On (Max) @ Id, Vgs :

5Ohm @ 500mA, 10V

Number of Channels :

1