2N7000
- Mfr.Part #
- 2N7000
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CHANNEL 60V 200MA TO92
- Stock
- 4,779
- In Stock :
- 4,779
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 60V
- Power Dissipation-Max :
- 400mW Ta
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Current Rating :
- 200mA
- Weight :
- 201mg
- RoHS Status :
- ROHS3 Compliant
- Supplier Device Package :
- TO-92-3
- Drain to Source Breakdown Voltage :
- 60V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Nominal Vgs :
- 2.1 V
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Threshold Voltage :
- 2.1V
- Rds On Max :
- 5 Ω
- Length :
- 4.8mm
- Width :
- 4.19mm
- Contact Plating :
- Copper, Silver, Tin
- Number of Elements :
- 1
- Factory Lead Time :
- 11 Weeks
- Power Dissipation :
- 400mW
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Bulk
- Gate to Source Voltage (Vgs) :
- 20V
- Resistance :
- 5Ohm
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs (Max) :
- ±20V
- Base Part Number :
- 2N7000
- Input Capacitance :
- 40pF
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Continuous Drain Current (ID) :
- 200mA
- Max Operating Temperature :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2011
- Min Operating Temperature :
- -55°C
- Height :
- 5.2mm
- Number of Pins :
- 3
- Voltage - Rated DC :
- 60V
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 10 ns
- Drain to Source Resistance :
- 1.2Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Ta
- Rds On (Max) @ Id, Vgs :
- 5Ohm @ 500mA, 10V
- Number of Channels :
- 1
- Datasheets
- 2N7000

N-Channel Bulk 5Ohm @ 500mA, 10V ±20V 50pF @ 25V 60V TO-226-3, TO-92-3 (TO-226AA)
2N7000 is a well-known N-channel MOSFET in a TO-92 package. Unlike BJT transistors, which are current-controlled devices, MOSFETs are devices that are controlled by applying a voltage to their gate. One of the key features of MOSFET technology is that the transistor requires very little or no input current to control the load, making MOSFETs ideal for use as amplifiers. The 2N7000 also has all these features, so it can be used in many general-purpose switching applications. It offers good performance when used as an amplifier, so you can use it for audio and other signal amplification purposes.
2N7000 Features
High cell density
High saturation current
Drain-to-source voltage of 60 V
Operating temperature of -55 °C to 150 °C
Rugged, reliable, and fast switching performance
2N7000 Applications
IC output
Audio preamplifier
Audio amplification
Microcontroller output
Various signal amplification
Switch or control loads under 200mA
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