2N3811U

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

Collector Base Voltage (VCBO) :

60V

Collector Emitter Breakdown Voltage :

60V

Max Power Dissipation :

350mW

JESD-609 Code :

e0

Polarity :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Max Collector Current :

50mA

Number of Pins :

6

Power Dissipation :

350mW

JESD-30 Code :

O-MBCY-W8

Collector Emitter Voltage (VCEO) :

60V

Transistor Type :

2 PNP (Dual)

Current - Collector Cutoff (Max) :

10μA ICBO

Mounting Type :

Through Hole

Package / Case :

TO-78-6 Metal Can

Packaging :

Bulk

Operating Temperature :

-65°C~200°C TJ

Terminal Finish :

TIN LEAD

RoHS Status :

Non-RoHS Compliant

Mount :

Surface Mount, Through Hole

Factory Lead Time :

12 Weeks

Terminal Form :

Wire

Radiation Hardening :

No

Terminal Position :

BOTTOM

Number of Terminations :

8

Published :

2007

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1mA 5V

Pbfree Code :

No

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

5V

Number of Elements :

2