2N3811U

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Power Dissipation :

350mW

Transistor Type :

2 PNP (Dual)

Collector Emitter Voltage (VCEO) :

60V

Factory Lead Time :

12 Weeks

JESD-609 Code :

e0

Transistor Element Material :

SILICON

Terminal Position :

BOTTOM

Collector Emitter Breakdown Voltage :

60V

Max Collector Current :

50mA

Number of Elements :

2

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

Polarity :

PNP

Mount :

Surface Mount, Through Hole

Emitter Base Voltage (VEBO) :

5V

Collector Base Voltage (VCBO) :

60V

Operating Temperature :

-65°C~200°C TJ

RoHS Status :

Non-RoHS Compliant

Pbfree Code :

No

Power Dissipation :

350mW

JESD-30 Code :

O-MBCY-W8

Number of Pins :

6

Package / Case :

TO-78-6 Metal Can

Radiation Hardening :

No

Terminal Form :

Wire

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

10μA ICBO

Packaging :

Bulk

Terminal Finish :

TIN LEAD

Published :

2007

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1mA 5V

Mounting Type :

Through Hole

Number of Terminations :

8