2N3811L

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

RoHS Status :

Non-RoHS Compliant

Max Power Dissipation :

350mW

Transistor Type :

2 PNP (Dual)

Configuration :

SEPARATE, 2 ELEMENTS

Radiation Hardening :

No

Number of Terminations :

8

Mount :

Through Hole

Published :

2007

Collector Emitter Voltage (VCEO) :

250mV

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

Number of Pins :

6

Terminal Finish :

TIN LEAD

Terminal Form :

Wire

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Collector Emitter Breakdown Voltage :

60V

JESD-609 Code :

e0

ECCN Code :

EAR99

JESD-30 Code :

O-MBCY-W8

Packaging :

Bulk

Number of Elements :

2

Terminal Position :

BOTTOM

Pbfree Code :

No

Transistor Element Material :

SILICON

HTS Code :

8541.21.00.95

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1mA 5V

Current - Collector Cutoff (Max) :

10μA ICBO

Max Collector Current :

50mA

Package / Case :

TO-78-6 Metal Can

Collector Base Voltage (VCBO) :

60V

Operating Temperature :

-65°C~200°C TJ

Power - Max :

350mW

Polarity/Channel Type :

PNP