2N3811

Manufacturer :

Solid State Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Mount :

Through Hole

Collector Base Voltage (VCBO) :

60V

Max Collector Current :

50mA

Transistor Element Material :

SILICON

Operating Temperature :

-65°C~200°C TJ

Collector Emitter Voltage (VCEO) :

250mV

Packaging :

Bulk

Terminal Form :

Wire

Transistor Type :

2 PNP (Dual)

ECCN Code :

EAR99

Mounting Type :

Through Hole

Number of Elements :

2

Max Power Dissipation :

350mW

HTS Code :

8541.21.00.95

Package / Case :

TO-78-6 Metal Can

Power - Max :

350mW

JESD-30 Code :

O-MBCY-W8

Terminal Finish :

TIN LEAD

Transition Frequency :

100MHz

Current - Collector Cutoff (Max) :

10μA ICBO

Pbfree Code :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1mA 5V

Number of Terminations :

8

Published :

2007

Number of Pins :

6

RoHS Status :

Non-RoHS Compliant

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

Polarity/Channel Type :

PNP

Terminal Position :

BOTTOM

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e0

Configuration :

SEPARATE, 2 ELEMENTS

Transistor Application :

AMPLIFIER

Collector Emitter Breakdown Voltage :

60V

Pin Count :

8