2N3811

Manufacturer :

Solid State Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Bulk

Pin Count :

8

Transistor Type :

2 PNP (Dual)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

Terminal Form :

Wire

Mount :

Through Hole

Power - Max :

350mW

Published :

2007

Radiation Hardening :

No

RoHS Status :

Non-RoHS Compliant

Terminal Finish :

TIN LEAD

Number of Pins :

6

ECCN Code :

EAR99

Operating Temperature :

-65°C~200°C TJ

Package / Case :

TO-78-6 Metal Can

Transition Frequency :

100MHz

Collector Base Voltage (VCBO) :

60V

Transistor Element Material :

SILICON

HTS Code :

8541.21.00.95

Current - Collector Cutoff (Max) :

10μA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1mA 5V

JESD-30 Code :

O-MBCY-W8

Max Collector Current :

50mA

Max Power Dissipation :

350mW

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

AMPLIFIER

Number of Elements :

2

Polarity/Channel Type :

PNP

Terminal Position :

BOTTOM

Mounting Type :

Through Hole

Pbfree Code :

No

JESD-609 Code :

e0

Collector Emitter Breakdown Voltage :

60V

Configuration :

SEPARATE, 2 ELEMENTS

Collector Emitter Voltage (VCEO) :

250mV