2N3811

Manufacturer :

Solid State Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Power - Max :

350mW

Transistor Application :

AMPLIFIER

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

Terminal Finish :

TIN LEAD

Package / Case :

TO-78-6 Metal Can

Number of Terminations :

8

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1mA 5V

Configuration :

SEPARATE, 2 ELEMENTS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

No

Packaging :

Bulk

Number of Elements :

2

Operating Temperature :

-65°C~200°C TJ

Mount :

Through Hole

Collector Base Voltage (VCBO) :

60V

Pin Count :

8

Collector Emitter Breakdown Voltage :

60V

Transistor Element Material :

SILICON

Max Collector Current :

50mA

RoHS Status :

Non-RoHS Compliant

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

250mV

Transition Frequency :

100MHz

JESD-30 Code :

O-MBCY-W8

Radiation Hardening :

No

HTS Code :

8541.21.00.95

JESD-609 Code :

e0

Number of Pins :

6

Max Power Dissipation :

350mW

Current - Collector Cutoff (Max) :

10μA ICBO

Published :

2007

Mounting Type :

Through Hole

Terminal Form :

Wire

Transistor Type :

2 PNP (Dual)

Polarity/Channel Type :

PNP

Terminal Position :

BOTTOM