ZXTDE4M832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain Bandwidth Product :

180MHz

Pin Count :

10

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

8-VDFN Exposed Pad

Mount :

Surface Mount

Frequency - Transition :

160MHz 180MHz

hFE Min :

200

Collector Emitter Voltage (VCEO) :

325mV

Transition Frequency :

160MHz

Width :

2mm

Vce Saturation (Max) @ Ib, Ic :

325mV @ 300mA, 3.5A / 260mV @ 200mA, 1.5A

Collector Base Voltage (VCBO) :

70V

Qualification Status :

Not Qualified

Height :

1mm

Current - Collector (Ic) (Max) :

3.5A 2.5A

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 200mA 2V / 40 @ 1.5A 5V

Case Connection :

COLLECTOR

Mounting Type :

Surface Mount

Base Part Number :

ZXTDE4M832

Max Breakdown Voltage :

70V

Number of Terminations :

10

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Current Rating :

3.5A

JESD-609 Code :

e3

Number of Elements :

2

Element Configuration :

Dual

Length :

3mm

Collector Emitter Breakdown Voltage :

70V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PQFP-F10

Transistor Type :

NPN, PNP

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Terminal Form :

Flat

Continuous Collector Current :

-2.5A

Number of Pins :

832

Max Collector Current :

2.5A

Polarity :

NPN, PNP

Packaging :

Tape and Reel (TR)

Published :

2006

Emitter Base Voltage (VEBO) :

7.5V

Terminal Position :

QUAD

Transistor Application :

SWITCHING

Max Power Dissipation :

1W

Current - Collector Cutoff (Max) :

25nA

Voltage - Collector Emitter Breakdown (Max) :

80V 70V