ZXTD618MCTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Vce Saturation (Max) @ Ib, Ic :

300mV @ 125mA, 4.5A

REACH SVHC :

No SVHC

Collector Emitter Voltage (VCEO) :

20V

Additional Feature :

High Reliability

Collector Emitter Saturation Voltage :

8mV

Frequency - Transition :

100MHz

Transition Frequency :

140MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 200mA 2V

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

7V

Radiation Hardening :

No

Factory Lead Time :

16 Weeks

Transistor Type :

2 NPN (Dual)

Gain Bandwidth Product :

140MHz

Continuous Collector Current :

4.5A

Number of Elements :

2

Number of Pins :

8

Package / Case :

8-VDFN Exposed Pad

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Pbfree Code :

yes

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

40V

Case Connection :

COLLECTOR

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e4

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2011

Number of Terminations :

8

Transistor Application :

SWITCHING

Max Collector Current :

4.5A

Element Configuration :

Dual

Pin Count :

8

Polarity :

NPN

Collector Emitter Breakdown Voltage :

20V

Max Breakdown Voltage :

20V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Current - Collector (Ic) (Max) :

5A

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

100nA

Mount :

Surface Mount

Max Power Dissipation :

1.7W

Operating Temperature :

-55°C~150°C TJ