ZXTD617MCTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

15V

Gain Bandwidth Product :

120MHz

Element Configuration :

Dual

Transistor Application :

SWITCHING

Factory Lead Time :

16 Weeks

Peak Reflow Temperature (Cel) :

260

Additional Feature :

High Reliability

Emitter Base Voltage (VEBO) :

7V

Vce Saturation (Max) @ Ib, Ic :

310mV @ 50mA, 4.5A

Pbfree Code :

yes

Frequency - Transition :

80MHz

Number of Elements :

2

Polarity :

NPN

Transition Frequency :

120MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 200mA 2V

Collector Base Voltage (VCBO) :

40V

Number of Pins :

8

Number of Terminations :

8

Current - Collector (Ic) (Max) :

5A

Case Connection :

COLLECTOR

Packaging :

Tape and Reel (TR)

Collector Emitter Saturation Voltage :

940mV

Current - Collector Cutoff (Max) :

100nA

JESD-609 Code :

e4

Max Power Dissipation :

1.7W

Radiation Hardening :

No

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

15V

Max Collector Current :

4.5A

Mount :

Surface Mount

Package / Case :

8-VDFN Exposed Pad

Operating Temperature :

-55°C~150°C TJ

Max Breakdown Voltage :

15V

Transistor Type :

2 NPN (Dual)

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2010

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

RoHS Status :

ROHS3 Compliant