ZXTD619MCTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 200mA 2V

Additional Feature :

High Reliability

Power - Max :

1.7W

Transistor Type :

2 NPN (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

JESD-609 Code :

e4

Published :

2011

Max Power Dissipation :

2.45W

Transistor Element Material :

SILICON

Number of Elements :

2

Number of Pins :

8

Element Configuration :

Dual

Polarity :

NPN

Vce Saturation (Max) @ Ib, Ic :

320mV @ 200mA, 4A

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Radiation Hardening :

No

Pin Count :

8

Operating Temperature :

-55°C~150°C TJ

Current - Collector Cutoff (Max) :

100nA

Gain Bandwidth Product :

165MHz

Mounting Type :

Surface Mount

Case Connection :

COLLECTOR

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

7V

Pbfree Code :

yes

Power Dissipation :

2.45W

Frequency - Transition :

100MHz

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

No SVHC

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Frequency :

165MHz

Collector Emitter Saturation Voltage :

270mV

Number of Terminations :

8

Collector Base Voltage (VCBO) :

100V

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

4A

Collector Emitter Voltage (VCEO) :

50V

Transistor Application :

SWITCHING

Package / Case :

8-VDFN Exposed Pad

Transition Frequency :

165MHz

Max Breakdown Voltage :

50V

Factory Lead Time :

16 Weeks