ZXTD1M832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Breakdown Voltage :

12V

Terminal Position :

QUAD

Transistor Application :

SWITCHING

Transition Frequency :

110MHz

Gain Bandwidth Product :

110MHz

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Collector Current :

-4A

Number of Terminations :

10

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Base Part Number :

ZXTD1M832

Pin Count :

10

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

12V

Power Dissipation :

3W

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

7.5V

Polarity :

PNP

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

300mV @ 150mA, 4A

JESD-30 Code :

R-PQFP-F10

Case Connection :

COLLECTOR

Mounting Type :

Surface Mount

Element Configuration :

Dual

Package / Case :

8-VDFN Exposed Pad

Mount :

Surface Mount

Length :

3mm

Current - Collector Cutoff (Max) :

25nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 2.5A 2V

Terminal Form :

Flat

Published :

2006

Collector Emitter Voltage (VCEO) :

300mV

Transistor Type :

2 PNP (Dual)

Terminal Finish :

Matte Tin (Sn)

Collector Base Voltage (VCBO) :

-20V

Collector Emitter Saturation Voltage :

-240mV

Frequency :

110MHz

Number of Elements :

2

Power - Max :

1.7W

JESD-609 Code :

e3

Number of Pins :

832

Width :

2mm

Max Power Dissipation :

1.7W

Current Rating :

-4A

Height :

1mm

Max Collector Current :

4A

Voltage - Rated DC :

-12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)