ZXTD1M832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Breakdown Voltage :

12V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Max Power Dissipation :

1.7W

Current - Collector Cutoff (Max) :

25nA

Operating Temperature :

-55°C~150°C TJ

Vce Saturation (Max) @ Ib, Ic :

300mV @ 150mA, 4A

Terminal Form :

Flat

Transistor Application :

SWITCHING

Current Rating :

-4A

Width :

2mm

Case Connection :

COLLECTOR

Collector Emitter Voltage (VCEO) :

300mV

Number of Terminations :

10

JESD-30 Code :

R-PQFP-F10

Gain Bandwidth Product :

110MHz

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 2.5A 2V

Power - Max :

1.7W

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Published :

2006

Transistor Type :

2 PNP (Dual)

Transition Frequency :

110MHz

Number of Pins :

832

Voltage - Rated DC :

-12V

Continuous Collector Current :

-4A

Pin Count :

10

Frequency :

110MHz

Collector Base Voltage (VCBO) :

-20V

ECCN Code :

EAR99

Power Dissipation :

3W

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

12V

Collector Emitter Saturation Voltage :

-240mV

Terminal Position :

QUAD

Emitter Base Voltage (VEBO) :

7.5V

Polarity :

PNP

Height :

1mm

Element Configuration :

Dual

Length :

3mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

ZXTD1M832

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Max Collector Current :

4A

Package / Case :

8-VDFN Exposed Pad

Transistor Element Material :

SILICON

JESD-609 Code :

e3