ZXTD1M832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transition Frequency :

110MHz

Length :

3mm

Package / Case :

8-VDFN Exposed Pad

Gain Bandwidth Product :

110MHz

Max Breakdown Voltage :

12V

ECCN Code :

EAR99

Published :

2006

Max Collector Current :

4A

Emitter Base Voltage (VEBO) :

7.5V

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Case Connection :

COLLECTOR

Height :

1mm

Max Power Dissipation :

1.7W

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 2.5A 2V

Polarity :

PNP

Transistor Type :

2 PNP (Dual)

Terminal Form :

Flat

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

-240mV

Current - Collector Cutoff (Max) :

25nA

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PQFP-F10

Terminal Position :

QUAD

Power - Max :

1.7W

Number of Elements :

2

Continuous Collector Current :

-4A

Frequency :

110MHz

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Dual

Base Part Number :

ZXTD1M832

Qualification Status :

Not Qualified

Pin Count :

10

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Mount :

Surface Mount

Current Rating :

-4A

Collector Base Voltage (VCBO) :

-20V

Mounting Type :

Surface Mount

Voltage - Rated DC :

-12V

Width :

2mm

Power Dissipation :

3W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

12V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 150mA, 4A

Number of Terminations :

10

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

300mV

Packaging :

Tape and Reel (TR)

Number of Pins :

832