ZXTD3M832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Power Dissipation :

1.7W

Collector Emitter Voltage (VCEO) :

370mV

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

40V

Terminal Position :

QUAD

Operating Temperature :

-55°C~150°C TJ

Max Collector Current :

3A

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Polarity/Channel Type :

PNP

ECCN Code :

EAR99

Current Rating :

-3A

Package / Case :

8-VDFN Exposed Pad

Max Breakdown Voltage :

40V

Number of Elements :

2

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Vce Saturation (Max) @ Ib, Ic :

370mV @ 250mA, 2.5A

Current - Collector Cutoff (Max) :

25nA

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

10

Case Connection :

COLLECTOR

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Transition Frequency :

190MHz

Configuration :

SEPARATE, 2 ELEMENTS

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 1.5A 2V

Terminal Form :

Flat

Frequency - Transition :

190MHz

JESD-30 Code :

R-PQFP-F10

Base Part Number :

ZXTD3M832

Voltage - Rated DC :

-40V

Power - Max :

1.7W

Transistor Type :

2 PNP (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

10