ZXTD3M832TA
- Mfr.Part #
- ZXTD3M832TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-VDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS 2PNP 40V 3A 8MLP
- Stock
- 7,492
- In Stock :
- 7,492
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Case Connection :
- COLLECTOR
- Number of Elements :
- 2
- Collector Emitter Voltage (VCEO) :
- 370mV
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 3A
- Voltage - Rated DC :
- -40V
- Transition Frequency :
- 190MHz
- Current Rating :
- -3A
- Vce Saturation (Max) @ Ib, Ic :
- 370mV @ 250mA, 2.5A
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Package / Case :
- 8-VDFN Exposed Pad
- Pin Count :
- 10
- Current - Collector Cutoff (Max) :
- 25nA
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Terminal Form :
- Flat
- Number of Terminations :
- 10
- Peak Reflow Temperature (Cel) :
- 260
- Frequency - Transition :
- 190MHz
- JESD-30 Code :
- R-PQFP-F10
- Collector Emitter Breakdown Voltage :
- 40V
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- QUAD
- Base Part Number :
- ZXTD3M832
- Configuration :
- SEPARATE, 2 ELEMENTS
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 1.7W
- Max Breakdown Voltage :
- 40V
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Power - Max :
- 1.7W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 1.5A 2V
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Transistor Type :
- 2 PNP (Dual)
- Datasheets
- ZXTD3M832TA

ZXTD3M832TA datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Diodes Incorporated stock available at
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