ZXTDCM832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Saturation Voltage :

270mV

Case Connection :

COLLECTOR

Max Collector Current :

4A

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

2

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

25nA

Pin Count :

10

Terminal Position :

QUAD

Transistor Element Material :

SILICON

JESD-30 Code :

R-PQFP-F10

Base Part Number :

ZXTDCM832

Collector Base Voltage (VCBO) :

100V

ECCN Code :

EAR99

Current Rating :

4A

Terminal Finish :

Matte Tin (Sn)

Collector Emitter Voltage (VCEO) :

50V

Transistor Type :

2 NPN (Dual)

Emitter Base Voltage (VEBO) :

7.5V

Voltage - Rated DC :

50V

Max Breakdown Voltage :

50V

Power Dissipation :

3W

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

10

Transistor Application :

SWITCHING

Frequency :

165MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A 2V

Packaging :

Tape and Reel (TR)

Height :

1mm

Qualification Status :

Not Qualified

Gain Bandwidth Product :

165MHz

RoHS Status :

ROHS3 Compliant

Transition Frequency :

140MHz

Mount :

Surface Mount

Mounting Type :

Surface Mount

Element Configuration :

Dual

Continuous Collector Current :

4A

Terminal Form :

Flat

Length :

3mm

Vce Saturation (Max) @ Ib, Ic :

320mV @ 200mA, 4A

Max Power Dissipation :

1.7W

Polarity :

NPN

JESD-609 Code :

e3

Package / Case :

8-VDFN Exposed Pad

Published :

2006

Number of Pins :

832

Width :

2mm