ZXTDB2M832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

270mV @ 125mA, 4.5A / 300mV @ 350mA, 3.5A

Transistor Type :

NPN, PNP

Base Part Number :

ZXTDB2M832

Frequency - Transition :

140MHz 180MHz

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

20V

Number of Elements :

2

Current - Collector (Ic) (Max) :

4.5A 3.5A

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Collector Emitter Breakdown Voltage :

20V

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

1.7W

Peak Reflow Temperature (Cel) :

260

Polarity :

NPN, PNP

Height :

1mm

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

4.5A

Transistor Element Material :

SILICON

Number of Terminations :

10

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

QUAD

Case Connection :

COLLECTOR

Transition Frequency :

140MHz

Max Breakdown Voltage :

20V

Terminal Form :

Flat

Qualification Status :

Not Qualified

Gain Bandwidth Product :

180MHz

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

25nA

Width :

2mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2A 2V / 150 @ 2A 2V

Collector Base Voltage (VCBO) :

25V

Mount :

Surface Mount

Frequency :

140MHz

Number of Pins :

832

Published :

2002

Emitter Base Voltage (VEBO) :

7.5V

Power Dissipation :

3W

Pin Count :

10

Max Collector Current :

3.5A

Length :

3mm

Package / Case :

8-VDFN Exposed Pad

JESD-30 Code :

R-PQFP-F10

Element Configuration :

Dual