ZXTDAM832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Time@Peak Reflow Temperature-Max (s) :

40

JESD-30 Code :

R-PQFP-F10

Transistor Element Material :

SILICON

Gain Bandwidth Product :

120MHz

Emitter Base Voltage (VEBO) :

7.5V

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 3A 2V

Width :

2mm

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

ECCN Code :

EAR99

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Polarity :

NPN

Voltage - Rated DC :

15V

Height :

1mm

Collector Emitter Voltage (VCEO) :

280mV

Length :

3mm

Terminal Form :

Flat

Transistor Type :

2 NPN (Dual)

Published :

2006

Pin Count :

10

Max Power Dissipation :

1.7W

Current - Collector Cutoff (Max) :

25nA

Package / Case :

8-VDFN Exposed Pad

Peak Reflow Temperature (Cel) :

260

Case Connection :

COLLECTOR

Terminal Position :

QUAD

Mount :

Surface Mount

Lead Free :

Lead Free

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

832

Collector Emitter Breakdown Voltage :

15V

Transition Frequency :

120MHz

Collector Base Voltage (VCBO) :

40V

Current Rating :

4.5A

Collector Emitter Saturation Voltage :

240mV

Base Part Number :

ZXTDAM832

Max Collector Current :

4.5A

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

280mV @ 50mA, 4.5A

Number of Terminations :

10

Mounting Type :

Surface Mount

Continuous Collector Current :

4.5A

Max Breakdown Voltage :

15V

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)