ZXTDAM832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Saturation Voltage :

240mV

Width :

2mm

Number of Elements :

2

Collector Emitter Voltage (VCEO) :

280mV

Length :

3mm

Mounting Type :

Surface Mount

Max Power Dissipation :

1.7W

Current Rating :

4.5A

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

280mV @ 50mA, 4.5A

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Terminal Form :

Flat

Collector Base Voltage (VCBO) :

40V

Continuous Collector Current :

4.5A

Polarity :

NPN

Element Configuration :

Dual

JESD-30 Code :

R-PQFP-F10

Published :

2006

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 3A 2V

Voltage - Rated DC :

15V

Max Collector Current :

4.5A

Package / Case :

8-VDFN Exposed Pad

Height :

1mm

Mount :

Surface Mount

Max Breakdown Voltage :

15V

Transition Frequency :

120MHz

Gain Bandwidth Product :

120MHz

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

ZXTDAM832

Case Connection :

COLLECTOR

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Number of Terminations :

10

Terminal Position :

QUAD

Emitter Base Voltage (VEBO) :

7.5V

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Breakdown Voltage :

15V

Transistor Application :

SWITCHING

Pin Count :

10

Current - Collector Cutoff (Max) :

25nA

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

832

Transistor Type :

2 NPN (Dual)